Radiation hardened high voltage superjunction mosfet

ABSTRACT

A high voltage superjunction MOSFET includes a semiconductor substrate and a semiconductor layer having columns of first and second conductivity. A buffer layer of the first conductivity is between the semiconductor substrate and semiconductor layer. A plug region of the second conductivity is formed at a semiconductor layer surface and extends to the columns. A source/drain region is formed at the semiconductor layer surface and is connected to the plug region. The source/drain region has a concentration of the first conductivity between about 1×10 19  cm −3  and 1.5×10 20  cm −3 . A body region of the second conductivity is between the source/drain region and the first column and is connected to the plug region. A gate trench is formed in the semiconductor layer surface and extends toward the first column and has a trench gate electrode disposed therein. A dielectric layer separates the trench gate electrode from the first column.

BACKGROUND OF THE INVENTION

Embodiments of the present invention relate generally to semiconductordevices and their methods of manufacture, and more particularly, to highvoltage superjunction metal-oxide-semiconductor field-effect transistors(MOSFETs) designed for increased reliability in the presence ofradiation.

When semiconductor devices, such as power MOSFETs, are utilized in theupper atmosphere or in space (e.g., on rockets, satellites, spacestations, or the like), they must maintain reliability despite thepresence of potentially damaging cosmic rays. This is also true in otherenvironments where the semiconductor device may be subjected toradiation doses above and beyond typical working conditions. Reliabilityparameters for such devices and conditions often refer to catastrophicevents such as Single Event Burnout (SEB) and Single Event Gate Rupture(SEGR).

An example architecture for a conventional high voltage superjunctionMOSFET 10 is shown in FIG. 1. A semiconductor substrate 12 has formedthereon a semiconductor layer 14 having a plurality of n-type and p-typecolumns 16, 18 formed therein. Highly doped source/drain regions 20 andbody contact regions 22 are formed at a surface of the semiconductorlayer 14 opposite the semiconductor substrate 12. Body regions 24 arealso formed at the same surface and separate respective source/drainregions 20 and body contact regions 22 from the n- and p-columns 16, 18.A gate electrode 26 overlies a portion of the subject surface of thesemiconductor layer 14, and is spaced apart therefrom by a dielectriclayer 28. A source/drain electrode 30 connects to the source/drainregions 20 and body contact regions 22. However, high voltagesuperjunctions MOSFETs, such as those shown in FIG. 1, are known to failat a source/drain voltage Vds of between about 10% and about 30% of themaximum rated Vds for both SEB and SEGR.

It is therefore desirable to provide a high voltage superjunction MOSFETwith a higher Vds failure threshold for both SEB and SEGR events.

BRIEF SUMMARY OF THE INVENTION

Briefly stated, an embodiment of the present invention comprises a highvoltage superjunction MOSFET including a semiconductor substrate havingopposing first and second main surfaces and a first concentration of afirst conductivity type. A semiconductor layer has opposing first andsecond main surfaces and includes a first column of the firstconductivity type and a second column of the second conductivity typeopposite to the first conductivity type. The first and second columnsextend from the second main surface of the semiconductor layer towardthe first main surface of the semiconductor layer. The first column hasa second concentration of the first conductivity type that is less thanthe first concentration, and the second column has a third concentrationof the second conductivity type. A buffer layer is disposed between thefirst main surface of the semiconductor substrate and the second mainsurface of the semiconductor layer. The buffer layer has a fourthconcentration of the first conductivity type that is less than the firstconcentration. A plug region is formed at the first main surface of thesemiconductor layer and extends to the first and second columns. Theplug region has a fifth concentration of the second conductivity type,and the fifth concentration is greater than the third concentration. Asource/drain region is formed at the first main surface of thesemiconductor layer and is connected to the plug region. Thesource/drain region has a sixth concentration of the first conductivitytype, and the sixth concentration is between about 1×10¹⁹ cm⁻³ to about1.5×10²⁰ cm⁻³. A body region is disposed between the source/drain regionand the first column and is connected to the plug region. The bodyregion has a seventh concentration of the second conductivity type thatis lower than the fifth concentration. A gate trench is formed in thefirst main surface of the semiconductor layer and extends toward thefirst column. The source/drain region and the body region are adjacent asidewall of the gate trench. A trench gate electrode is disposed withinthe gate trench, and a dielectric layer is at least partially disposedwithin the gate trench and separates the trench gate electrode from thefirst column.

In one aspect, the buffer layer has a thickness measured between thesemiconductor layer and the semiconductor substrate of between about 40μm and about 60 μm. In another aspect, the fourth concentration in thebuffer layer is between about 3×10¹⁶ cm⁻³ to about 3×10¹⁷ cm⁻³.

In another aspect, the plug region extends to a depth from the firstmain surface of the semiconductor layer of between about 1.3 μm to about1.8 μm. In another aspect, the plug region has a width in a directionparallel to first main surface of the semiconductor layer of betweenabout 3 μm to about 6 μm. In yet another aspect, the fifth concentrationin the plug region is between about 2×10¹⁹ cm⁻³ to about 5×10¹⁹ cm⁻³.

In another aspect, the body region has a width extending from the gatetrench in a direction parallel to the first main surface of thesemiconductor layer of between about 0.1 μm to about 1 μm.

In another aspect, the trench gate electrode is spaced apart from thefirst column by the dielectric layer by a distance of between about 10nm to about 200 nm.

In another aspect, the gate trench has a width in a direction parallelto the first main surface of the semiconductor layer of between about0.25 μm to about 0.5 μm.

Another embodiment of the present invention comprises a method offorming a high voltage superjunction MOSFET. The method includesproviding a semiconductor substrate having opposing first and secondmain surfaces and a first concentration of a first conductivity type andforming a buffer layer on the first main surface of the semiconductorsubstrate. The buffer layer has a second concentration of the firstconductivity type that is less than the first concentration. The methodfurther includes forming a semiconductor layer having opposing first andsecond main surfaces. The second main surface is disposed on a surfaceof the buffer layer opposite to the semiconductor substrate. The methodfurther includes forming a trench at the first main surface of thesemiconductor layer and extending at least partially through thesemiconductor layer and forming first and second columns in thesemiconductor layer extending from the second main surface of thesemiconductor layer toward the first main surface of the semiconductorlayer. The first column has a third concentration of the firstconductivity type less than the first concentration. The second columnis located between the first column and the trench and has a fourthconcentration of a second conductivity type opposite to the firstconductivity type. The method further includes forming a plug region atthe first main surface of the semiconductor layer and extending to thefirst and second columns. The plug region has a fifth concentration ofthe second conductivity type, and the fifth concentration is greaterthan the fourth concentration. The method further includes forming agate trench in the first main surface of the semiconductor layer abovethe first column and forming a source/drain region at the first mainsurface of the semiconductor layer, adjacent to a sidewall of the gatetrench and connected to the plug region. The source/drain region has asixth concentration of the first conductivity type, and the sixthconcentration is between about 1×10¹⁹ cm⁻³ to about 1.5×10²⁰ cm⁻³. Themethod further includes forming a body region adjacent to the sidewallof the gate trench and connected to the plug region. The body region hasa seventh concentration of the second conductivity type that is lowerthan the fifth concentration. The body region is disposed between thesource/drain region and the first column. The method further includesforming a dielectric layer at least partially within the gate trench andforming a trench gate electrode on the dielectric layer within the gatetrench.

In one aspect, the method further includes filling the trench with adielectric material.

In another aspect, the source/drain region is formed after the formationof the gate trench.

In another aspect, the plug region is formed before the formation of thegate trench.

In another aspect, the buffer layer is formed to have a thicknessmeasured between the semiconductor layer and the semiconductor substrateof between about 40 μm and about 60 μm. In yet another aspect, thesecond concentration in the buffer layer is between about 3×10¹⁶ cm⁻³ toabout 3×10¹⁷ cm⁻³.

In another aspect, the fifth concentration in the plug region is betweenabout 2×10¹⁹ cm⁻³ to about 5×10¹⁹ cm⁻³.

In another aspect, the body region is formed having a width extendinginto the semiconductor layer from the gate trench of between about 0.1μm to about 1 μm.

In another aspect, the dielectric layer in the gate trench prior toformation of the trench gate electrode has a thickness measured from abottom of the gate trench of between about 10 nm to about 200 nm.

In another aspect, the gate trench is formed having a width in adirection parallel to the first main surface of the semiconductor layerof between about 0.25 μm to about 0.5 μm.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The following detailed description of preferred embodiments of theinvention will be better understood when read in conjunction with theappended drawings. For the purpose of illustration, there are shown inthe drawings embodiments which are presently preferred. It should beunderstood, however, that the invention is not limited to the precisearrangements and instrumentalities shown.

In the drawings:

FIG. 1 is an enlarged partial cross-sectional elevational view of aconventional high voltage superjunction MOSFET;

FIG. 2 is an enlarged partial cross-sectional elevational view of a highvoltage superjunction MOSFET in accordance with an example embodiment ofthe present invention;

FIG. 3 is an enlarged partial cross-sectional elevational view of asemiconductor substrate, buffer layer, and semiconductor layer inaccordance with an example embodiment;

FIG. 4 is an enlarged partial cross-sectional elevational view of thedevice of FIG. 3 with plug regions formed thereon;

FIG. 5 is an enlarged partial cross-sectional elevational view of thedevice of FIG. 4 with source/drain regions, body regions, and gatetrenches formed thereon; and

FIG. 6 is an enlarged partial cross-sectional elevational view of thedevice of FIG. 5 with trench gate electrodes formed thereon.

DETAILED DESCRIPTION OF THE INVENTION

Certain terminology is used in the following description for convenienceonly and is not limiting. The words “right”, “left”, “lower”, and“upper” designate directions in the drawings to which reference is made.The words “inwardly” and “outwardly” refer to directions toward and awayfrom, respectively, the geometric center of the device and designatedparts thereof. The terminology includes the above-listed words,derivatives thereof, and words of similar import. Additionally, thewords “a” and “an”, as used in the claims and in the correspondingportions of the specification, mean “at least one.” Unless statedotherwise, terms such as “first” and “second” are used to arbitrarilydistinguish between the elements such terms describe. Thus, these termsare not necessarily intended to indicate temporal or otherprioritization of such elements.

It should also be understood that the terms “about,” “approximately,”“generally,” “substantially” and like terms, used herein when referringto a dimension or characteristic of a component of the invention,indicate that the described dimension/characteristic is not a strictboundary or parameter and does not exclude minor variations therefromthat are functionally similar. At a minimum, such references thatinclude a numerical parameter would include variations that, usingmathematical and industrial principles accepted in the art (e.g.,rounding, measurement or other systematic errors, manufacturingtolerances, etc.), would not vary the least significant digit.

As used herein, reference to conductivity will be limited to theembodiment described. However, those skilled in the art know that p-typeconductivity can be switched with n-type conductivity and the devicewould still be functionally correct (i.e., a first or a secondconductivity type). Therefore, where used herein, reference to n or pcan also mean either n or p or p and n can be substituted therefor.

Furthermore, n⁺ and p⁺ refer to heavily doped n and p regions,respectively; n⁺⁺ and p⁺⁺ refer to very heavily doped n and p regions,respectively; n⁻ and p⁻ refer to lightly doped n and p regions,respectively; and n⁻⁻ and p⁻⁻ refer to very lightly doped n and pregions, respectively. However, such relative doping concentration termsshould not be construed as limiting.

Referring to FIG. 2, there is shown an enlarged, partialcross-sectional, elevational view of a high voltage superjunction MOSFET100 in accordance with an example embodiment of the present invention.The device 100 preferably includes a semiconductor substrate 102 havingopposed first and second main surfaces 102 a, 102 b, and which may be ofa heavily-doped n⁺ type. A buffer layer 103 is preferably disposed onthe first main surface 102 a of the semiconductor substrate 102. Thebuffer layer 103 is also preferably of n-type, although theconcentration is preferably lower than the concentration of thesemiconductor substrate 102. A semiconductor layer 104 may also beprovided having opposed first and second main surfaces 104 a, 104 b. Thesecond main surface 104 b of the semiconductor layer 104 being disposedon a surface of the buffer layer 103 opposite to the semiconductorsubstrate 102. In this manner, the buffer layer 103 is disposed betweenthe first main surface 102 a of the semiconductor substrate 102 and thesecond main surface 104 b of the semiconductor layer 104. Thesemiconductor layer 104 may include a pair, and preferably a plurality,of alternating n and p columns 106, 108 that extend at least partiallyfrom the second main surface 104 b of the semiconductor layer 104 towardthe first main surface 104 a of the semiconductor layer 104. Theconcentration within the n columns 106 is preferably less than theconcentration of the semiconductor substrate 102 and may be less thanthe concentration in the buffer layer 103.

In the embodiment shown in FIG. 2, the n and p columns 106, 108 begin atthe second main surface 104 b of the semiconductor layer 104 and theinterface with the buffer layer 103. However, the invention is not solimited. There may be a gap between one or both of the n- and p-columns106, 108 and the second main surface 104 b of the semiconductor layer104. In another alternative, a thin layer of material (not shown) may bedisposed between the semiconductor layer 104 and the buffer layer 103.

At least one, and preferably more, trenches 110 may formed to extend atleast partially through the semiconductor layer 104 from the first mainsurface 104 a thereof. Each trench 110 includes a sidewall 110 a and abottom 110 b. In the embodiment shown in FIG. 2, the trench 110 extendsentirely through the semiconductor layer 104 such that the bottom 110 bis formed by a surface of the buffer layer 103. However, the inventionis not so limited. The trench 110 may only extend partially through thesemiconductor layer 104, in which case a portion of the semiconductorlayer 104 would form the bottom 110 b of the trench 110. In still otherembodiments, the trench 110 may extend through the semiconductor layer104 and partially into the buffer layer 103, or through the buffer layerand partially into the semiconductor substrate 102, for example. In theexample shown in FIG. 2, one of the p columns 108 is disposed betweenthe trench 110 and a nearby n column 106, although other arrangements ofdevice components in the semiconductor layer 104 may be utilized aswell. For example, the p column 108 may extend to a shorter depth thanthe trench 110 such that the trench sidewall 110 a may also be incontact with an n-doped portion of the semiconductor layer 104.

The trenches 110 in FIG. 2 are shown as being filled with a dielectricfill material 112, such as an oxide or the like. However, the inventionis not so limited. For example, in some embodiments, the trenches 110may remain largely unfilled (although the sidewalls 110 a and/or bottoms110 b of the trenches 110 may be lined with material (not shown). Insuch cases, openings of the trenches 110 would be sealed, and thetrenches 110 may contain one or more gases, such as inert gas or air, orbe sealed under vacuum.

Highly doped (e.g., p⁺) plug regions 114 may be formed at the first mainsurface 104 a of the semiconductor layer 104 adjacent respectivesidewalls 110 a of the trenches 110. The plug regions 114 preferablyextend from the first main surface 104 a of the semiconductor layer 104to corresponding n and p columns 106, 108. Highly doped (e.g., n⁺)source/drain regions 116 may also be formed at the first main surface104 a of the semiconductor layer 104 and connected to respective plugregions 114. Body regions 118 (such as p doped regions) may be formedbetween respective source/drain regions 116 and n columns 106. The bodyregions 118 further connect to respective plug regions 114.

Gate trenches 120 may be formed in the first main surface 104 a of thesemiconductor layer 104 and extend toward respective n columns 106.Sidewalls of the gate trenches 120 are preferably adjacent to respectivesource/drain regions 116 and body regions 118. For example, thesidewalls of the gate trenches 120 may be formed by respectivesource/drain regions 116 and body regions 118. However, the gate trench120 sidewalls may also be adjacent to a portion of the respective ncolumn 106. The gate trenches 120 in FIG. 2 are shown with bottomsadjacent to (e.g., formed by) the respective n columns 106, but in someembodiments the bottoms of the gate trenches 120 may be spaced apartfrom the n columns by one or more intervening regions (not shown).

Each gate trench 120 may have a trench gate electrode 122 disposedtherein. Each trench gate electrode 122 is preferably disposed entirelywithin the respective gate trench 120, but in some embodiments a portionof the trench gate electrode 122 may from inside the gate trench 120beyond the first main surface 104 a of the semiconductor layer 104. Eachtrench gate electrode 122 is provided spaced apart from the sidewallsand bottom of the respective gate trench 120 (and therefore, spacedapart from the adjacent n column 106, source/drain regions 116, and bodyregions 118) by a dielectric layer 124 at least partially disposedwithin the gate trench 120. An inter-dielectric oxide layer 126 may beformed over the trench gate electrodes 122 and other portions of thefirst main surface 104 a of the semiconductor layer 104, including overthe trenches 110. A metal source/drain electrode 128 preferably connectswith the source/drain regions 116 and plug regions 114 through theinter-dielectric oxide layer 126.

FIGS. 3-6 generally show various steps of manufacturing thesuperjunction MOSFET 100 shown in FIG. 2.

Referring to FIG. 3, the semiconductor substrate 102 is preferablyformed of silicon (Si). But, the semiconductor substrate 102 may beformed of other materials such as gallium arsenide (GaAs), germanium(Ge), or the like. The semiconductor substrate 102 preferably is of theheavily doped n⁺ type, e.g., having a concentration between about 1×10¹⁸cm⁻³ to about 5×10²⁰ cm⁻³.

The buffer layer 103 is formed on the first main surface 102 a of thesemiconductor substrate 102 and is similarly preferably formed ofsilicon, but can be formed of other materials (e.g., gallium arsenide,germanium, or the like). In some embodiments, the buffer layer 103 maybe bonded to the semiconductor substrate 102. The bonding process mayinclude annealing the semiconductor substrate 102 and the buffer layer103 in an annealing furnace at up to 1200° C. for a period of about afew minutes to several hours. Optionally, the bonding steps may includewetting the surfaces of the semiconductor substrate 102 and the bufferlayer 103 to be joined with a solution such as water (H₂O) and hydrogenperoxide (H₂O₂) and then pressing the wetted surface together and dryingthem prior to annealing at 800-1200° C. Plasma etches may be used toremove impure oxides on the surfaces of the semiconductor substrate 102and the buffer layer 103 to be bonded. Alternatively, the buffer layer103 may be epitaxially grown or deposited on the first main surface 102a of the semiconductor substrate 102. In other embodiments, thesemiconductor substrate 102 and the buffer layer 103 may be formed froma single block of semiconductor material that is doped or implanted toform the two different layers.

The buffer layer 103 preferably has a thickness (measured between thesemiconductor layer 104 and the semiconductor substrate 102) of betweenabout 40 μm and about 60 μm, and more preferably, the buffer layer 103has a thickness of about 50 The buffer layer 103 also preferably has ann-type concentration between about 3×10¹⁶ cm⁻³ to about 3×10¹⁷ cm⁻³, andmore preferably, the buffer layer 103 has an n-type concentration ofabout 3.5×10¹⁶ cm⁻³.

The semiconductor layer 104 is formed such that the second main surface104 b is disposed on a surface of the buffer layer 103 opposite to thesemiconductor substrate 102. In some embodiments, the semiconductorlayer 104 may be epitaxially grown on a surface of the buffer layer 103and may be a lightly doped n⁻ or intrinsically n doped silicon layer.The epitaxial growth or deposition may occur in a suitable reactionchamber at a temperature of up to about 1200° C. to a desired thickness.Other methods for forming the semiconductor layer 104 on the bufferlayer 103, such as by bonding, annealing, and the like, may be used. Inother embodiments, the buffer layer 103 and the semiconductor layer 104may be formed from a single block of semiconductor material that isdoped to form the two different layers prior to bonding or adhering thesame to the semiconductor substrate 102.

The trenches 110 are formed in the first main surface 104 a of thesemiconductor layer 104. The trenches 110 are preferably etched usingdeep reactive ion etching (DRIE). DRIE utilizes an ionized gas, orplasma, such as, for example, sulfur hexafluoride (SF₆), to removematerial from the semiconductor layer 104. DRIE technology permitsdeeper trenches 110 with straighter sidewalls. Other techniques forforming the trenches 110 can be used, however, such as plasma etching,reactive ion etching (ME), sputter etching, vapor phase etching,chemical etching, or the like.

A mask (not shown) is selectively applied over the first main surface104 a of the semiconductor layer 104. The mask may be created bydeposition of a layer of photoresist or in some other manner well knownto those skilled in the art. The developed photoresist is removed, andundeveloped photoresist remains in place as is known in the art. Forsimplification, the mask refers to the material used to prevent certainareas of a semiconductor from being etched, doped, coated or the like.In certain embodiments, a thin layer of oxide or other dielectricmaterial (not shown) may be applied to the first main surface 104 a ofthe semiconductor layer 104 prior to formation of the mask. The trenches110 are formed in the areas not covered by the mask. After the trenchingprocess, the mask is removed using techniques known in the art.

The sidewalls 110 a of each trench 110 can be smoothed, if needed,using, for example, one or more of the following process steps: (i) anisotropic plasma etch may be used to remove a thin layer of silicon(typically 100-1000 Angstroms) from the trench 110 surfaces or (ii) asacrificial silicon dioxide layer may be grown on the surfaces of thetrench 110 and then removed using an etch such as a buffered oxide etchor a diluted hydrofluoric (HF) acid etch. The use of the smoothingtechniques can produce smooth trench surfaces with rounded corners whileremoving residual stress and unwanted contaminates. However, inembodiments where it is desirable to have vertical sidewalls and squarecorners, an anisotropic etch process will be used instead of theisotropic etch process discussed above. Anisotropic etching, in contrastto isotropic etching, generally means different etch rates in differentdirections in the material being etched.

If necessary, the sidewalls 110 a of the trenches 110 are implanted ordoped with an n-type dopant, which may occur at predetermined angles, toform the n columns 106. The implantation angles are determined by thewidth of the trenches 110 and the desired doping depth, and aretypically from about 2° to 12° (−2° to −12°) from vertical. The implantis done at angles so that the bottom 110 b of each trench 110 is notimplanted. Preferably, the implantation occurs at least partially, andpreferably entirely, between the first main surface 104 a of thesemiconductor layer 104 and the buffer layer 103. The implant isperformed at an energy level of about 30-200 kilo-electron-Volts (KeV)with dose ranges from about 1E13 to 1E14 cm⁻² (i.e., about 1×10¹³ to1×10¹⁴ cm⁻²). Consequently, a dopant of the first conductivity type(e.g., n-type) is implanted into the semiconductor layer 104 to formdoped regions of the first conductivity type having a dopingconcentration lower than that of the heavily doped semiconductorsubstrate 102 and also possibly lower than that of the buffer layer 103.For example, the concentration for the doped regions in thesemiconductor layer 104 may be between about 1×10¹⁵ cm⁻³ to about 1×10¹⁷cm⁻³. The doping may occur with the aid of a mask (not shown) placedover the first main surface 104 a of the semiconductor layer 104.

The doping may be performed by one of ion implantation, solid diffusion,liquid diffusion, spin-on deposits, plasma doping, vapor phase doping,laser doping, or the like. Doping with boron B results in a more p-typeregion, doping with phosphorus P results in a more n-type region anddoping with arsenic Ar results in a more n-type region. Other dopantsmay be utilized, such as antimony Sb, bismuth Bi, aluminum Al, indiumIn, gallium Ga or the like depending on the material and the desiredstrength of the doping. Preferably, the doping is performed by ionimplantation.

Following implanting, a drive-in step at a temperature of up to 1200° C.may be performed for up to 12 hours. It should be recognized that thetemperature and time are selected to sufficiently drive in the implanteddopant. But, the energy level used to perform ion implantation, asdescribed above, may be high enough to sufficiently drive in the dopantswithout departing from the present invention. If the semiconductor layer104 is already adequately doped for purposes of the resulting n column106, then these steps may be omitted.

A similar doping step preferably occurs with respect to the sidewalls110 a of the trenches 110, but with a dopant of the oppositeconductivity type (e.g., p-type), to form the p columns 108 thatseparate the n column 106 from the trench 110. The p columns 108 mayhave a concentration between about 1×10¹⁵ cm⁻³ to about 1×10¹⁷ cm⁻³.

In some embodiments, an oxide layer (not shown) may be formed over thefirst main surface 104 a of the semiconductor layer 104, as well as onthe sidewalls 110 a and bottoms 110 b of the trenches 110. Such oxidelayer may be formed using thermal growth, low pressure (LP) chemicalvapor deposition (CVD), plasma enhanced chemical vapor deposition(PECVD), atmospheric pressure chemical vapor deposition (APCVD),deposition, or the like.

Referring to FIG. 4, one or more plug regions are formed at the firstmain surface 104 a of the semiconductor layer 104 and partially alongthe sidewalls 110 a of the trenches 110. The plug regions 114 arepreferably of heavily doped p-type conductivity. The concentration ispreferably between about 2×10¹⁹ cm⁻³ to about 5×10¹⁹ cm⁻³, and morepreferably, the concentration in the plug regions 114 is about 2.26×10¹⁹cm⁻³, which is about double the concentration found in a heavily-dopedp⁺ type body contact region 22 in a standard superjunction MOSFET (FIG.1). In preferred embodiments, the plug regions 114 are formed bydepositing an oxide layer (not shown) over the first main surface 104 aof the semiconductor layer 104, followed by the ion implantation of ap-type dopant (or n-type dopant) into the n and p columns 106, 108through the oxide layer at an energy level of about 30-1000 KeV with adose range from about 1×10¹⁰ to 1×10¹⁶ atoms cm⁻², preferably from about1×10¹⁴ to 1×10¹⁶ atoms cm⁻², followed by a high temperature drive-instep (i.e., a diffusion). Other methods may be utilized as are known inthe art. In addition, the plug regions 114 can be formed at leastpartially by performing ion implantation of the sidewalls 110 a of thetrenches 110. Preferably the plug regions 114 extend to a depth into thesemiconductor layer 104 measured from the first main surface 104 a ofthe semiconductor layer 104 of between about 1.3 μm to about 1.8 μm, andmore preferably, to a depth of about 1.42 μm. In comparison with theconventional superjunction MOSFET, the p⁺ body contact regions 22, forexample, typically extend to a depth of about 1.15 μm.

Referring to FIG. 5, gate trenches 120 may be formed in the first mainsurface 104 a of the semiconductor layer 104 within the previouslyformed plug regions 114 and above the n columns 106. Each gate trench120 preferably extends to a depth measured from the first main surface104 a of the semiconductor layer 104 that is slightly greater than orequal to the depth of the corresponding plug region 114. The gatetrenches 120 may be formed by techniques such as self-aligning siliconetching, slight silicon wet etching, or the like. In other embodiments,the plug regions 114 may be formed after the formation of the gatetrenches 120. In still further embodiments, the plug regions 114 may beformed first, but as separate regions rather than a single, continuousregion between trenches 110, and therefore the gate trenches 120 may beformed in the first surface 104 a of the semiconductor layer 104 withoutremoving material from the plug regions 114.

Source/drain regions 116 may also be formed at the first main surface104 a of the semiconductor layer 104 and adjacent to respectivesidewalls of the gate trenches 120. As the source/drain regions 116 arepreferably formed in the previously formed plug regions 114, thesource/drain regions 116 connect to the plug regions 114. Thesource/drain regions 116 are preferably heavily doped n⁺ type regions,which may be formed using techniques similar to those described abovefor formation of the plug regions 114, and may utilize the gate trenches120 to aid in implantation/doping processes. Preferably, theconcentration of the source/drain regions 116 is between about 1×10¹⁹cm⁻³ to about 1.5×10 cm⁻³ and more preferably, the source/drain region116 concentration is about 5.95×10¹⁹ cm⁻³.

Body regions 118 may be formed adjacent to the gate trench 120sidewalls, and each ends up being disposed between the respectivesource/drain region 116 and the n column 106. As the body regions 118are formed in the previously formed plug regions 114, the body regions118 connect to the plug regions 114. The body regions 118 are preferablyof p-type conductivity, having a dopant concentration suitable forforming inversion layers that operate as conduction channels of thedevice 100, for example a concentration in the body region 118 may bebetween about 1×10¹⁶ cm⁻³ to about 5×10¹⁷ cm⁻³, and may be formed usingtechniques similar to those described above for formation of the plugregions 114, although ion implantation preferably takes place via thesidewalls of the gate trenches 120. Each body region 118 preferably alsohas a width extending from the gate trench 120 and measured in adirection parallel to the first main surface 104 a of the semiconductorlayer 104 of between about 0.1 μm to about 1 More preferably, the widthof the body region 104 is about 0.3 In comparison, body regions 24 inconventional devices (see FIG. 1) typically have a width extending fromthe edge of a corresponding p column 18 of about 3.3 μm.

The orientation of the source/drain region 116 with respect to the bodyregion 118 is not limited and can be varied depending upon the desiredconfiguration of the device 100. Further, there is no limit to the orderin which the two regions 116, 118 may be formed. In still otherembodiments, the source/drain and body regions 116, 118 may be formedprior to formation of the gate trenches 120.

The trenches 110 may be filled with dielectric fill material 112, suchas silicon dioxide, semi-insulating polycrystalline silicon (SIPOS),combinations thereof, or the like. The dielectric fill material 112 maybe applied using CVD, thermal growth, spun-on-glass (SOG) techniques, orthe like. In alternative embodiments, the trenches 110 are not filled,but may be lined with an oxide layer according to conventionaltechniques and are sealed by either the inter-dielectric oxide layer 126(FIG. 6) or by a separate sealing material (not shown).

Referring to FIG. 6, a dielectric layer 124 may be grown or deposited atleast partially within the gate trenches 120. In some embodiments, athin oxide layer (not shown) is deposited on the sidewalls and bottom ofthe gate trench 120 as a pad for silicon nitride deposition. A thinlayer of silicon nitride (not shown) is then deposited (e.g., via CVD)on the thin oxide layer on the sidewalls and bottom of the trench. Thesilicon nitride is then selectively removed (e.g., by RIE) from the gatetrench 120 bottom, but allowed to remain on the gate trench 120sidewalls. A dielectric layer 124 of desired thickness is then formed onthe gate trench 120 bottom (oxide growth on the gate trench 120sidewalls is prevented by the silicon nitride which remains). Thesilicon nitride is then removed from the gate trench 120 sidewalls.Rounding of the thick bottom dielectric material 124 can be accomplishedby further etching. Preferably, the thickness of the dielectric material124 at the bottom of the gate trench 120 is between about 10 nm to about200 nm, and more preferably, the thickness is about 200 nm. Thedielectric layer 124 may be silicon dioxide, silicon oxynitride, siliconnitride, tantalum pentoxide, titanium dioxide, barium strontiumtitanate, combinations thereof, or the like.

Trench gate electrodes 122 are then formed on the dielectric layer 124within the gate trenches 120 and may be composed of, for example, ametal, a doped polysilicon, an amorphous silicon, or a combinationthereof, and formed by conventional techniques.

This architecture significantly differs from the active area of aconventional device 10 (FIG. 1) in several additional ways. Aside fromutilizing trench gate electrodes 122, the body regions 118 are muchsmaller and are preferably confined to an area adjacent the gatetrenches 120. The body regions 118 also no longer directly connect withthe p columns 108. In addition, whereas body regions 24 separated by then column 16 in the conventional device 10 are typically spaced apart bya distance on the order of about 5.4 nearby body regions 118 in theexample embodiment are separated mainly by the width (in a directionparallel to the first main surface 104 a of the semiconductor layer 104)of the shared gate trench 122, which preferably is between about 0.25 μmto about 0.5 More preferably, the gate trench 122 width (and separationbetween body regions 118) is about 0.3 Still further, a width of theplug region 114, taken from the adjacent trench 110 and measured in adirection parallel to the first main surface 104 a of the semiconductorlayer 104, is between about 3 μm to about 6 and more preferably about5.55 μm. A body contact region 22 in a conventional device 10, forcomparison, typically only has a width of about 1 and does not directlyconnect with either the n or p columns 16, 18.

The inter-dielectric oxide layer 126 may be formed over the first mainsurface 104 a of the semiconductor layer 104, including over thetrenches 110 (filled or unfilled) and gate trenches 120. Theinter-dielectric oxide layer 126 may be formed according to dielectriclayer formation techniques described above (e.g., thermal growth, LPCVDor the like). The inter-dielectric oxide layer 126 may further beplanarized, using CMP or the like. Contact holes (FIG. 2) may be formedin the inter-dielectric oxide layer 126 using conventional oxide etchingtechniques. Using methods known in the field, metallization is performedto deposit a layer of metal 128, which serves as the source/drainelectrode, over the contact hole openings, and the remaininginter-dielectric oxide layer 126, thereby coupling the source/drainelectrode 128 to the source/drain regions 116. Passivation is performedusing methods known in the field with an appropriate passivationmaterial such as nitride, oxide or phosphosilicate glass (PSG) to arriveat the device 100 shown in FIG. 2.

With the improvements described above, it is possible to increase thefailure threshold for both SEB and SEGR to source/drain voltages Vds ofabout 600 V, a near ten-fold increase in reliability.

Those skilled in the art will recognize that boundaries between theabove-described operations are merely illustrative. The multipleoperations may be combined into a single operation, a single operationmay be distributed in additional operations and operations may beexecuted at least partially overlapping in time. Further, alternativeembodiments may include multiple instances of a particular operation,and the order of operations may be altered in various other embodiments.

While specific and distinct embodiments have been shown in the drawings,various individual elements or combinations of elements from thedifferent embodiments may be combined with one another while in keepingwith the spirit and scope of the invention. Thus, an individual featuredescribed herein only with respect to one embodiment should not beconstrued as being incompatible with other embodiments described hereinor otherwise encompassed by the invention.

It will be appreciated by those skilled in the art that changes could bemade to the embodiments described above without departing from the broadinventive concept thereof. It is understood, therefore, that thisinvention is not limited to the particular embodiments disclosed, but itis intended to cover modifications within the spirit and scope of thepresent invention as defined by the appended claims.

1. A high voltage superjunction MOSFET comprising: a semiconductorsubstrate having opposing first and second main surfaces and a firstconcentration of a first conductivity type; a semiconductor layer havingopposing first and second main surfaces and including a first column ofthe first conductivity type and a second column of the secondconductivity type opposite to the first conductivity type; a firsttrench formed completely through the semiconductor layer; a secondtrench formed completely through the semiconductor layer, wherein thefirst and second columns are disposed between the first trench andsecond trench, the first column having a second concentration of thefirst conductivity type that is less than the first concentration, thesecond column having a third concentration of the second conductivitytype; an insulating material filling the first trench and second trench;a buffer layer disposed between the first main surface of thesemiconductor substrate and the second main surface of the semiconductorlayer, the buffer layer having a fourth concentration of the firstconductivity type that is less than the first concentration; a plugregion formed at the first main surface of the semiconductor layer andextending to the first and second columns, the plug region having afifth concentration of the second conductivity type, the fifthconcentration being greater than the third concentration; a source/drainregion formed at the first main surface of the semiconductor layer andconnected to the plug region, the source/drain region having a sixthconcentration of the first conductivity type, the sixth concentrationbeing between about 1×10¹⁹ cm⁻³ to about 1.5×10²⁰ cm⁻³; a body regiondisposed between the source/drain region and the first column andconnected to the plug region, the body region having a seventhconcentration of the second conductivity type that is lower than thefifth concentration; a gate trench formed in the first main surface ofthe semiconductor layer and extending toward the first column, thesource/drain region and the body region being adjacent a sidewall of thegate trench; a trench gate electrode disposed within the gate trench;and a dielectric layer at least partially disposed within the gatetrench and separating the trench gate electrode from the first column.2. The high voltage superjunction MOSFET of claim 1, wherein the bufferlayer has a thickness measured between the semiconductor layer and thesemiconductor substrate of between about 40 μm and about 60 μm.
 3. Thehigh voltage superjunction MOSFET of claim 1, wherein the fourthconcentration in the buffer layer is between about 3×10¹⁶ cm⁻³ to about3×10¹⁷ cm⁻³.
 4. The high voltage superjunction MOSFET of claim 1,wherein the plug region extends to a depth from the first main surfaceof the semiconductor layer of between about 1.3 μm to about 1.8 μm. 5.The high voltage superjunction MOSFET of claim 1, wherein the plugregion has a width in a direction parallel to first main surface of thesemiconductor layer of between about 3 μm to about 6 μm.
 6. The highvoltage superjunction MOSFET of claim 1, wherein the fifth concentrationin the plug region is between about 2×10¹⁹ cm⁻³ to about 5×10¹⁹ cm⁻³. 7.The high voltage superjunction MOSFET of claim 1, wherein the bodyregion has a width extending from the gate trench in a directionparallel to the first main surface of the semiconductor layer of betweenabout 0.1 μm to about 1 μm.
 8. The high voltage superjunction MOSFET ofclaim 1, wherein the trench gate electrode is spaced apart from thefirst column by the dielectric layer by a distance of between about 10nm to about 200 nm.
 9. The high voltage superjunction MOSFET of claim 1,wherein the gate trench has a width in a direction parallel to the firstmain surface of the semiconductor layer of between about 0.25 μm toabout 0.5 μm. 10-19. (canceled)
 20. A high voltage superjunction MOSFETcomprising: a substrate; a semiconductor layer disposed over thesubstrate; a first trench formed through the semiconductor layer; asecond trench formed through the semiconductor layer; an insulatingmaterial disposed in the first trench and second trench; a source/drainregion formed at a surface of the semiconductor layer; a gate trenchformed in the surface of the semiconductor layer adjacent to thesource/drain region and extending into the semiconductor layer; adielectric layer disposed within the gate trench; and a trench gateelectrode disposed over the dielectric layer within the gate trench. 21.The high voltage superjunction MOSFET of claim 20, further including abuffer layer disposed between the substrate and semiconductor layer. 22.The high voltage superjunction MOSFET of claim 20, further including: afirst column of semiconductor material formed within the semiconductorlayer between the first trench and second trench and having a firstconductivity type; and a second column of semiconductor material formedwith the semiconductor layer between the first trench and second trenchadjacent to the first column of semiconductor material, the secondcolumn of semiconductor material having a second conductivity typeopposite to the first conductivity type.
 23. The high voltagesuperjunction MOSFET of claim 20, further including a plug region formedat the surface of the semiconductor layer.
 24. The high voltagesuperjunction MOSFET of claim 23, further including a body regiondisposed within the plug region, wherein the gate trench is formedwithin the body region.
 25. (canceled)
 26. The high voltagesuperjunction MOSFET of claim 24, wherein the gate trench terminateswithin the body region.
 27. The high voltage superjunction MOSFET ofclaim 23, wherein the plug region formed from the surface of thesemiconductor layer to a depth between 1.3 μm and 1.8 μm.
 28. A highvoltage superjunction MOSFET comprising: a substrate; a semiconductorlayer disposed over the substrate; a first trench formed through thesemiconductor layer; a second trench formed through the semiconductorlayer; an insulating material disposed in the first trench and secondtrench; a first semiconductor region formed at a surface of thesemiconductor layer; a third trench formed in the first semiconductorregion and terminating within the first semiconductor region; adielectric layer disposed within the third trench; and a gate electrodedisposed over the dielectric layer in the third trench.
 29. The highvoltage superjunction MOSFET of claim 28, wherein the firstsemiconductor region formed from the surface of the semiconductor layerto a depth between 1.3 μm and 1.8 μm.
 30. The high voltage superjunctionMOSFET of claim 28, further including a buffer layer disposed betweenthe substrate and semiconductor layer.
 31. The high voltagesuperjunction MOSFET of claim 28, further including: a first column ofsemiconductor material formed within the semiconductor layer between thefirst trench and second trench; and a second column of semiconductormaterial formed with the semiconductor layer between the first trenchand second trench.
 32. The high voltage superjunction MOSFET of claim31, wherein the first column of semiconductor material includes a firstconductivity type, and the second column of semiconductor materialincludes a second conductivity type opposite to the first conductivitytype.
 33. The high voltage superjunction MOSFET of claim 28, furtherincluding a second semiconductor region formed at the surface of thesemiconductor layer, wherein the first semiconductor region is formedwithin the second semiconductor region.
 34. The high voltagesuperjunction MOSFET of claim 33, further including a thirdsemiconductor region formed at the surface of the semiconductor layerand extending over the first semiconductor region and secondsemiconductor region.